A Multi-Band 65 nm CMOS Power Amplifier Using Frequency Transformation Technique

Authors

  • Smail Traiche Ecole Nationale Polytechnique, Center for Development of Advanced Technologies (CDTA), Algiers, Algeria. https://orcid.org/0000-0003-4901-4406

DOI:

https://doi.org/10.38124/ijsrmt.v5i6.1546

Keywords:

65-nm CMOS, Multi-Band RC-FeedBack, Efficiency, Linearity, Frequency Transformation Technique, Third Order Intermodulation Point IMD3

Abstract

In this paper, a design and an optimization of feedback multi-band 65-nm CMOS power amplifier (PA) have been developed, based on the frequency transformation technique (FTT), in way to improve PA’s performances. The FT Technique aims to transform an off-chip single-band matching networks considered as low-pass (LP) filters to that of triple-band matching networks (MN). An RC-feedback was firstly added in thourough manner to boost the linearity. An ideal simulations have led to good results in terms of different performances. In fact, after optimizations in the triple band MN and RC-feedback, PA’s performances at central frequencies bands of 0.94, 1.94 and 2.44 GHz reached: (24.6 dBm, 24 dB, and 57.5%), (22.74 dBm, 20.48 dB and 48.9 %) and (25.8 dBm, 21.53 dB and 63.7 %), respectively. In addition, for the same central-frequencies, the output referred intermodulation third order point has given: 32.34, 22.06 and 32.34 dBm, respectively.

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Published

2026-07-25

How to Cite

Traiche, S. (2026). A Multi-Band 65 nm CMOS Power Amplifier Using Frequency Transformation Technique. International Journal of Scientific Research and Modern Technology, 5(6), 385–397. https://doi.org/10.38124/ijsrmt.v5i6.1546

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